Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice
نویسندگان
چکیده
منابع مشابه
Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10-4. The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes ...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2020
ISSN: 2158-3226
DOI: 10.1063/1.5136501